Dr.G.Anandha babu
Assistant Professor
Department of Physics
Email:[email protected]
Educational Qualifications
- 2014-2016: Post-Doctoral Research, Graduate School of Engineering, Nagoya University, Nagoya, Japan (Under the JSPS International Fellowship Scheme)
2010, Ph.D. (Experimental condensed matter physics) – Anna University, Chennai, India
2005, M. Sc. (Physics) – Bharathidasan University, Tiruchirappalli, India
2003, B. Sc. (Physics) – Bharathidasan University, Tiruchirappalli, India
Dr. G.Anandha babu completed his Ph.D from Anna University, Chennai in the year 2010. He received the prestigious Japan Society for the Promotion of Science (JSPS) Postdoctoral fellowship in 2014 and the SERB International Research Experience (SIRE) fellowship in 2023. He completed postdoctoral research at Graduate School of Engineering, Nagoya University, Nagoya, Japan (2014-2016), and at Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan (Sep. 2023-Mar. 2024). His research interests include multicrystalline Silicon, Dielectric, Ferroelectric and Piezoelectric materials, Topological Insulators, Defect Engineering, Semiconductor materials, Energy storage materials and Crystal growth. To his credit, he has published about 80 papers in peer reviewed international journals and completed DAE-BRNS, DRDO-ARMREB, DRDO-ARDB, CSIR, DST, SERB (Four projects) and UGC-DAE sponsored research projects. He has filed Japanese and Indian patents. He received Young Scientist Research Grants from DST-SERB in the year 2011 and 2016. Under his able guidance five students have received Ph.D degree. Currently three Ph.D scholars are doing research under his guidance. He has received financial assistances from DST, CSIR, TNSCST, CICS, SERB, JSPS and INSA to attend the “4th Asian conference on Crystal Growth and Crystal Technology; 14th International Summer School on Crystal Growth; 16th, 17th and 18th International Conferences on Crystal Growth and Epitaxy; 19th American conference on Crystal growth and Epitaxy; 25th and 26th International Photovoltaic Science and Engineering, 20th International Conference on Crystal Growth and Epitaxy Conferences held in Sendai, Japan in 2008, Dalian and Beijing, China in August 2010, Warsaw, Poland in August 2013, Nagoya, Japan in August 2016, Keystone, Colorado, USA in July 2013, Busan, South Korea in November 2015, Singapore in November 2016, Naples, Italy in July – August 2023, respectively.
Work Experience
- 2010 – 2026, Assistant Professor, Department of Physics, SSN College of Engineering
- 2023-2024, SERB International Research Experience (SIRE) fellow, Kumamoto University, Kumamoto, Japan
- 2014-2016 , JSPS Post-Doctoral Fellow, Nagoya University, Nagoya, Japan
Projects
Sponsored Project (As Principal Investigator)
1. Ongoing:
- 2024-27, ANRF:Development of piezoelectric single crystals for underwater acoustic sensing applications.
2. Completed:
- 2023-24, SERB: Development of defect controlled BaTiO3-DyTMO3 and Bi0.5Na0.5TiO3-DyTMO3 (TM = Mn, Fe, Ni) solid solutions for piezoelectric and photovoltaic applications
- 2020-23, DRDO: Development of high – Curie temperature piezoceramics for aviation applications
- 2019-22 ,SERB: Development of Bismuth-based complex perovskites piezoelectric single crystals for strategic applications
- 2018-21, CSIR: Development of high-performance ternary piezoelectric ceramics for transducer applications
- 2015-18, DRDO: Development of lead-free piezoelectric 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 single crystals for transducer applications
- 2016-19, DST –SERB: Growth and Characterization of defect controlled topological insulator Bi2Te2Se and Bi2-xSbxTe3-ySey single crystals
- 2014-17, UGC-DAE CRS: Investigations on Crystal growth and characterization of Multiferroic single crystals
- 2011-14, DAE-BRNS: Crystal Growth of Ce based alkali halides scintillator crystals and their characterization
- 2011-14, DST: Crystal Growth of lead free piezoelectric crystal [Bi0.5(Na1-xKx)0.5]TiO3 by flux technique and its Characterization
Publications
Total number of publications:80 (SCI Journals); Citations:1536 (on 1-07-2026); H- Index: 24
Selected publications
- Assumptana Sirumalar A, G.Anandha Babu, (2026), ‘Tailoring the structural, dielectric and energy storage properties of (Na0.4K0.1Bi0.5)TiO3 piezoceramics via Bi(Mg0.5Zr0.5)O3 substitution’, Materials Science & Engineering B, Vol. 324, Article number: 119061.
- G.Anandha babu, Hiroki Matsuo, Arun Kumar, Seiyu Aso, Yuji Noguchi (2025), ‘Structural, dielectric and energy storage properties of lead-free (1− x)Ba0.95La0.05TiO3‒xBi(Zn2/3Ta1/3)O3 relaxor ferroelectrics’, Ceramics International, Vol. 51, pp. 31692-31702
- S. Guru Bharath, G.Anandha Babu, C Manikandan, E.Varadharajan (2025), ‘Role of Bi2O3 and PbO excess on the Di-/ferro-/piezoelectric and bi-polar strain properties in 0.39Bi(Ni0.5Ti0.5)O3–0.20PbZrO3–0.41PbTiO3 ternary ceramics near MPB’, Applied Physics A, Vol. 131, Article number: 58.
- P.Aravinthkumar, G.Gopi, G.Anandha babu (2024), ‘Investigation on Structural, Dielectric, Ferroelectric, and Piezoelectric properties of (1-x)PbTiO3–(x)Bi(Zn2/3Nb1/3)O3 solid solutions’, Journal of Materials Science: Materials in Electronics, Vol. 35, Article number: 200.
- Arun Kumar, P. Aravinthkumar, G. Anandhababu, P. Vijayakumar, A. T. Sathyanarayana S. Ganesamoorthy (2024), ‘Growth and characterization of Dy1-xSmxMnO3 single crystals by optical floating zone technique’, J. Crystal Growth, Vol. 628, Article number: 127544.
- S. Guru Bharath, G.Anandha Babu, C Manikandan, E.Varadharajan (2024), ‘Effect of excess Bi2O3/PbO on the structural and electrical properties of ternary 0.39Bi(Ni1/2Ti1/2)O3–0.20PbZrO3– 0.41PbTiO3 ceramics’, Materials Science in Semiconductor Processing, Vol. 172, Article number: 108054.
- S.Gowthami, G.Anandha Babu, C.Manikandan, R.M.Sarguna, (2023), ‘Effective strategy of optimized dielectric, energy storage and piezoelectric performances in La3+ and Sr2+ co-doped PIMNT 42/26/32 relaxor ferroelectric ceramics’, Materials Science in Semiconductor Processing, Vol. 166, Article number: 107688.
- Gowthami, G.Anandha Babu, C.Manikandan, E.Varadarajan, R.M.Sarguna, (2023), ‘Improved piezoelectric and electric field-induced strain properties in Eu3+ modified 0.42PMN-0.26PIN-0.32PT ceramics’, Applied Physics A, Vol. 129, Article number: 239
- Guru Bharath, G.Anandha Babu, C Manikandan, E.Varadharajan (2023), ‘Improved piezoelectric, thermal stability and ferroelectric properties in ternary 0.39BNT–0.20PZ–0.41PT piezoceramics via low sintering temperature’, Journal of Materials Science: Materials in Electronics, Vol. 34, Article number: 706.
- P. Aravinth Kumar, Arun Kumar, Keshav Kumar, Pragya Singh, G. Anandha Babu, S.Ganesamoorthy and Dhananjai Pandey, (2021), ‘Growth and Characterization of Dy1-xYxMnO3 Single Crystals by Optical Floating Zone Technique: A Combined X-ray Diffraction and DC Magnetization Study’, J. Crystal Growth, Vol. 565, pp. 126152–126161.
- G.Gopi, A. Edward Prabu, G. Anandha babu, S. Ganesamoorthy, Awadhesh Mani, (2020), ‘Studies on Shubnikov-de Hass oscillations in p-Sb2Te2Se topological insulator’, Materials Research Bulletin, Vol. 124, pp. 110733.
- P.Aravinth Kumar, Arun Kumar, Keshav Kumar, G. Anandha babu, S. Ganesamoorthy, and Dhananjai Pandey, (2019), ‘Evidence for Spin Glass Transition in Hexagonal DyMnO3without Substitutional Disorder’, J. Phys. Chem. C2019, Vol.123, 50, pp. 30499-30508.
- G. Anandha babu, I. Takahashi, T. Muramatsu, N. Usami, (2017), ‘Towards optimized nucleation control in multicrystalline silicon ingot for solar cells’, J. Crystal Growth, Vol. 468, pp. 620-624.
- G. Anandha babu, I. Takahashi, S. Matsushima, N. Usami, (2016), ‘Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer’, J. Crystal Growth, Vol. 441, pp. 124-130.
- G.Anandha babu, et al. (2014), ‘Growth and characterization of undoped and Mn-doped lead-free piezoelectric NBT-KBT single crystals, Materials Research Bulletin, Vol. 53, pp. 136-140.
- G.Anandha babu, et al. (2014), ‘Growth and investigation of 0.80Na0.5Bi0.5TiO3-0.20K0.5Bi0.5TiO3 lead-free single crystal’, Materials Science and Engineering B, Vol. 185, pp. 134-137.
Area of Research
- Dielectric materials
- Ferroelectric materials
- Piezoelectric materials
- Topological Insulators
- Defect Engineering
- Semiconductor materials
- Energy storage materials
- Multicrystalline Silicon,
- Growth of Single Crystals from Top seeded solution growth, Bridgman, High temperature and low temperature solution growth methods.